Determining Carrier Concentration of Si-doped GaN using DC Hall Effect
Abstract
The DC Hall effect is an important phenomenon in condensed matter physics which allows us to measure properties of a semiconductor. In our experiment, we use the van der Pauw method to measure the Hall effect and determine the carrier concentration and carrier type of a silicon-doped gallium nitride (GaN) sample, 2 µm in thickness. We obtained a carrier concentration of (−2.251 ± 0.4109) × 1017 cm−3 using constant magnetic fields and (−2.208 ± 1.156) × 1017 using constant currents, which confirms a negative charge carrier and is similar to other values found in literature.
This paper has been withdrawn.