Date Presented

Spring 4-18-2022

Document Type

Capstone

Degree Name

Bachelor of Science

Department

Physics

First Advisor

Dali Sun

Second Advisor

Rui Sun

Abstract

The DC Hall effect is an important phenomenon in condensed matter physics which allows us to measure properties of a semiconductor. In our experiment, we use the van der Pauw method to measure the Hall effect and determine the carrier concentration and carrier type of a silicon-doped gallium nitride (GaN) sample, 2 µm in thickness. We obtained a carrier concentration of (−2.251 ± 0.4109) × 1017 cm−3 using constant magnetic fields and (−2.208 ± 1.156) × 1017 using constant currents, which confirms a negative charge carrier and is similar to other values found in literature.

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