Date Presented
Spring 4-18-2022
Document Type
Capstone
Degree Name
Bachelor of Science
Department
Physics
First Advisor
Dali Sun
Second Advisor
Rui Sun
Abstract
The DC Hall effect is an important phenomenon in condensed matter physics which allows us to measure properties of a semiconductor. In our experiment, we use the van der Pauw method to measure the Hall effect and determine the carrier concentration and carrier type of a silicon-doped gallium nitride (GaN) sample, 2 µm in thickness. We obtained a carrier concentration of (−2.251 ± 0.4109) × 1017 cm−3 using constant magnetic fields and (−2.208 ± 1.156) × 1017 using constant currents, which confirms a negative charge carrier and is similar to other values found in literature.
Recommended Citation
Allison, Austin James; Barnwell, Dylan C.; and Colon, Jose Rivera, "Determining Carrier Concentration of Si-doped GaN using DC Hall Effect" (2022). Undergraduate Theses and Capstone Projects. 206.
https://digitalshowcase.lynchburg.edu/utcp/206